- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,090
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 10A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 250W (Tc) | N-Channel | - | 650V | 10A (Tc) | 1 Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | 1645pF @ 25V | 10V | ±30V | |||
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VIEW |
1,395
In-stock
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Central Semiconductor Corp | MOSFET N-CH 10A 650V TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 2W (Ta), 156W (Tc) | N-Channel | - | 650V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 250µA | 20nC @ 10V | 1168pF @ 25V | 10V | 30V | |||
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VIEW |
2,449
In-stock
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IXYS | MOSFET P-CH 500V 10A TO-220 | PolarP™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 300W (Tc) | P-Channel | - | 500V | 10A (Tc) | 1 Ohm @ 5A, 10V | 4V @ 250µA | 50nC @ 10V | 2840pF @ 25V | 10V | ±20V | |||
