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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,119
In-stock
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Renesas Electronics America | MOSFET N-CH 600V 1A MP3A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MP-3A | 29.7W (Tc) | N-Channel | 600V | 1A (Ta) | 17.5 Ohm @ 500mA, 10V | 5V @ 1mA | 5nC @ 10V | 37.5pF @ 25V | 10V | ±30V | |||
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VIEW |
3,102
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 1A DP | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 40W (Tc) | N-Channel | 900V | 1A (Ta) | 9 Ohm @ 500mA, 10V | 4V @ 1mA | 15nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
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VIEW |
3,533
In-stock
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ON Semiconductor | MOSFET P-CH 100V 1A SOT-223 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.52W (Ta) | P-Channel | 100V | 1A (Ta) | 1.2 Ohm @ 500mA, 10V | 4V @ 250µA | 10nC @ 10V | 335pF @ 25V | 10V | ±30V | |||
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VIEW |
708
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
2,086
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
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VIEW |
2,643
In-stock
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ON Semiconductor | MOSFET N-CH 600V 1A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK/TP-FA | 1W (Ta), 38W (Tc) | N-Channel | 600V | 1A (Ta) | 13 Ohm @ 500mA, 10V | - | 3.8nC @ 10V | 65pF @ 20V | 10V | ±30V | |||
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VIEW |
1,562
In-stock
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ON Semiconductor | MOSFET N-CH 600V 1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 1W (Ta), 38W (Tc) | N-Channel | 600V | 1A (Ta) | 13 Ohm @ 500mA, 10V | - | 3.8nC @ 10V | 65pF @ 20V | 10V | ±30V | |||
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VIEW |
2,726
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | 100V | 1A (Ta) | 600 mOhm @ 600mA, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
2,662
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | |||
