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- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,334
In-stock
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STMicroelectronics | MOSFET N-CH 800V 4.5A TO-220FP | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 800V | 4.5A (Tc) | 1.6 Ohm @ 2A, 10V | 5V @ 100µA | 13nC @ 10V | 270pF @ 100V | 10V | 30V | ||||
VIEW |
759
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 6.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | - | 800V | 6.5A (Ta) | 950 mOhm @ 3.3A, 10V | 4V @ 280µA | 13nC @ 10V | 700pF @ 300V | 10V | ±20V | ||||
VIEW |
1,540
In-stock
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STMicroelectronics | MOSFET N-CH 800V 4.5A I2PAK-FP | SuperMESH5™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 800V | 4.5A (Tc) | 1.6 Ohm @ 2A, 10V | 5V @ 100µA | 13nC @ 10V | 270pF @ 100V | 10V | 30V |