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- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,377
In-stock
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STMicroelectronics | MOSFET N-CH 800V 4A TO-220 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 100W (Tc) | N-Channel | 800V | 4A (Tc) | 3.3 Ohm @ 2A, 10V | 5V @ 250µA | 29nC @ 10V | 920pF @ 25V | 10V | ±30V | |||
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VIEW |
3,240
In-stock
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STMicroelectronics | MOSFET N-CH 800V 4A I2PAKFP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5.5nC @ 10V | 177pF @ 100V | 10V | ±30V | |||
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VIEW |
1,012
In-stock
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Infineon Technologies | MOSFET N-CH 800V 4A TO-220AB | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 63W (Tc) | N-Channel | 800V | 4A (Tc) | 1.3 Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | 570pF @ 100V | 10V | ±20V |