Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF520
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VIEW
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881
In-stock
Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel - 100V 9.2A (Tc) 270 mOhm @ 5.5A, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V
TK7P60W5,RVQ
RFQ
VIEW
RFQ
696
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 670 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V
TK7P60W5,RVQ
RFQ
VIEW
RFQ
1,746
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A DPAK DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 670 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V
TK7P60W5,RVQ
RFQ
VIEW
RFQ
742
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A DPAK DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 670 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V
IRF520PBF
RFQ
VIEW
RFQ
3,073
In-stock
Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel - 100V 9.2A (Tc) 270 mOhm @ 5.5A, 10V 4V @ 250µA 16nC @ 10V 360pF @ 25V 10V ±20V