- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,672
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A TO-262-3 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
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VIEW |
1,107
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 120A TO262-3 | Automotive, AEC-Q101, TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 250W (Tc) | N-Channel | 100V | 120A (Tc) | 3.8 mOhm @ 20A, 10V | 3.5V @ 250µA | 190nC @ 10V | 7230pF @ 25V | 10V | ±20V | |||
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VIEW |
1,958
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
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VIEW |
1,225
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
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VIEW |
3,913
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
1,741
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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VIEW |
918
In-stock
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Infineon Technologies | MOSFET N-CH 650V 13.8A TO262 | CoolMOS™ E6 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 104W (Tc) | N-Channel | 650V | 13.8A (Tc) | 280 mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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VIEW |
804
In-stock
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Renesas Electronics America | MOSFET N-CH 60V 100A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.5W (Ta), 156W (Tc) | N-Channel | 60V | 100A (Ta) | 4.6 mOhm @ 50A, 10V | - | 133nC @ 10V | 7730pF @ 25V | 10V | ±20V | |||
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VIEW |
1,955
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 100A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.5W (Ta), 119W (Tc) | N-Channel | 40V | 100A (Ta) | 3.7 mOhm @ 50A, 10V | - | 100nC @ 10V | 5550pF @ 25V | 10V | ±20V | |||
