- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,707
In-stock
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ON Semiconductor | MOSFET P-CH 120V 15A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 100W (Tc) | P-Channel | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,129
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,333
In-stock
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Vishay Siliconix | MOSFET N-CH 400V 10A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | 400V | 10A (Tc) | 550 mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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|
VIEW |
3,101
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,260
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
2,834
In-stock
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ON Semiconductor | MOSFET N-CH 900V 4.2A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 140W (Tc) | N-Channel | 900V | 4.2A (Tc) | 3.3 Ohm @ 2.1A, 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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|
VIEW |
982
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
