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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFBC30AL	RFQ VIEW	PDF RFQ	1,847 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	74W (Tc)	N-Channel	-	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	10V	±30V
	FQI10N20CTU	RFQ VIEW	PDF RFQ	2,430 In-stock	ON Semiconductor	MOSFET N-CH 200V 9.5A I2PAK		QFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	72W (Tc)	N-Channel	-	200V	9.5A (Tc)	360 mOhm @ 4.75A, 10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	10V	±30V
	IRFBC30ALPBF	RFQ VIEW	PDF RFQ	1,007 In-stock	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	74W (Tc)	N-Channel	-	600V	3.6A (Tc)	2.2 Ohm @ 2.2A, 10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	10V	±30V
	STB4NK60Z-1	RFQ VIEW	PDF RFQ	3,028 In-stock	STMicroelectronics	MOSFET N-CH 600V 4A I2PAK		SuperMESH™	Not For New Designs	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	70W (Tc)	N-Channel	-	600V	4A (Tc)	2 Ohm @ 2A, 10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	10V	±30V

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