Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9Z34NL
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2,260
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Infineon Technologies MOSFET P-CH 55V 19A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) P-Channel 55V 19A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 620pF @ 25V 10V ±20V
IRF830AL
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976
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Vishay Siliconix MOSFET N-CH 500V 5A TO262-3 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.1W (Ta), 74W (Tc) N-Channel 500V 5A (Tc) 1.4 Ohm @ 3A, 10V 4.5V @ 250µA 24nC @ 10V 620pF @ 25V 10V ±30V
IRF9Z34NLPBF
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RFQ
1,310
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Infineon Technologies MOSFET P-CH 55V 19A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) P-Channel 55V 19A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 35nC @ 10V 620pF @ 25V 10V ±20V
IRF634NLPBF
RFQ
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RFQ
1,086
In-stock
Vishay Siliconix MOSFET N-CH 250V 8A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.8W (Ta), 88W (Tc) N-Channel 250V 8A (Tc) 435 mOhm @ 4.8A, 10V 4V @ 250µA 34nC @ 10V 620pF @ 25V 10V ±20V
IRF830ALPBF
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RFQ
1,432
In-stock
Vishay Siliconix MOSFET N-CH 500V 5A TO262-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3.1W (Ta), 74W (Tc) N-Channel 500V 5A (Tc) 1.4 Ohm @ 3A, 10V 4.5V @ 250µA 24nC @ 10V 620pF @ 25V 10V ±30V