Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQI10N60CTU
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3,059
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ON Semiconductor MOSFET N-CH 600V 9.5A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 156W (Tc) N-Channel - 600V 9.5A (Tc) 730 mOhm @ 4.75A, 10V 4V @ 250µA 57nC @ 10V 2040pF @ 25V 10V ±30V
IPI45N06S3-16
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RFQ
3,101
In-stock
Infineon Technologies MOSFET N-CH 55V 45A TO-262 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 65W (Tc) N-Channel - 55V 45A (Tc) 15.7 mOhm @ 23A, 10V 4V @ 30µA 57nC @ 10V 2980pF @ 25V 10V ±20V
AUIRFSL6535
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RFQ
3,650
In-stock
Infineon Technologies MOSFET NCH 300V 19A TO262 Automotive, AEC-Q101, HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 210W (Tc) N-Channel - 300V 19A (Tc) 185 mOhm @ 11A, 10V 5V @ 150µA 57nC @ 10V 2340pF @ 25V 10V ±20V