- Manufacture :
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- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,059
In-stock
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ON Semiconductor | MOSFET N-CH 600V 9.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 156W (Tc) | N-Channel | - | 600V | 9.5A (Tc) | 730 mOhm @ 4.75A, 10V | 4V @ 250µA | 57nC @ 10V | 2040pF @ 25V | 10V | ±30V | |||
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VIEW |
3,101
In-stock
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Infineon Technologies | MOSFET N-CH 55V 45A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 65W (Tc) | N-Channel | - | 55V | 45A (Tc) | 15.7 mOhm @ 23A, 10V | 4V @ 30µA | 57nC @ 10V | 2980pF @ 25V | 10V | ±20V | |||
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VIEW |
3,650
In-stock
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Infineon Technologies | MOSFET NCH 300V 19A TO262 | Automotive, AEC-Q101, HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 210W (Tc) | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V |