- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
705
In-stock
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Infineon Technologies | MOSFET P-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 137W (Tc) | P-Channel | 30V | 80A (Tc) | 5 mOhm @ 80A, 10V | 4V @ 253µA | 130nC @ 10V | 10300pF @ 25V | 10V | ±20V | |||
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VIEW |
831
In-stock
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Infineon Technologies | MOSFET N-CH 75V 97A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 190W (Tc) | N-Channel | 75V | 97A (Tc) | 8.8 mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | 3540pF @ 50V | 10V | ±20V | |||
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VIEW |
817
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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VIEW |
941
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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VIEW |
2,609
In-stock
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Infineon Technologies | MOSFET N-CH 60V 84A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | |||
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VIEW |
791
In-stock
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STMicroelectronics | MOSFET N-CH 40V 120A I2PAK | STripFET™ F6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 190W (Tc) | N-Channel | 40V | 120A (Tc) | 2.7 mOhm @ 60A, 10V | 4.5V @ 250µA | 130nC @ 10V | 7735pF @ 20V | 10V | ±20V | |||
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VIEW |
1,442
In-stock
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Nexperia USA Inc. | MOSFET N-CH 60V 100A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 306W (Tc) | N-Channel | 60V | 100A (Tc) | 3 mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | 8079pF @ 30V | 10V | ±20V |