Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPI040N06N3GHKSA1
RFQ
VIEW
RFQ
1,742
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 188W (Tc) N-Channel - 60V 90A (Tc) 4 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 10V ±20V
IRFSL4227PBF
RFQ
VIEW
RFQ
3,172
In-stock
Infineon Technologies MOSFET N-CH 200V 62A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 200V 62A (Tc) 26 mOhm @ 46A, 10V 5V @ 250µA 98nC @ 10V 4600pF @ 25V 10V ±30V
IPI040N06N3GXKSA1
RFQ
VIEW
RFQ
883
In-stock
Infineon Technologies MOSFET N-CH 60V 90A OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 188W (Tc) N-Channel - 60V 90A (Tc) 4 mOhm @ 90A, 10V 4V @ 90µA 98nC @ 10V 11000pF @ 30V 10V ±20V
STI57N65M5
RFQ
VIEW
RFQ
3,517
In-stock
STMicroelectronics MOSFET N-CH 650V 42A I2PAK-3 MDmesh™ V Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 250W (Tc) N-Channel - 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 10V ±25V