- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
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12 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,819
In-stock
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Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 280 mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,473
In-stock
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Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,654
In-stock
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Infineon Technologies | MOSFET N-CH 650V 15A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 280 mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | 1660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,341
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
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VIEW |
2,798
In-stock
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ON Semiconductor | MOSFET N-CH 600V 12A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 225W (Tc) | N-Channel | - | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | 10V | ±30V | |||
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VIEW |
1,762
In-stock
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Infineon Technologies | MOSFET N-CH 600V 20.2A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 151W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 10V | ±20V | |||
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VIEW |
742
In-stock
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Infineon Technologies | MOSFET P-CH 55V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 110W (Tc) | P-Channel | - | 55V | 31A (Tc) | 60 mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,543
In-stock
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Infineon Technologies | MOSFET N-CH 55V 49A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 55V | 49A (Tc) | 17.5 mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | 10V | ±20V | |||
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VIEW |
2,792
In-stock
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Infineon Technologies | MOSFET N-CH 650V 15A TO262-3 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 156W (Tc) | N-Channel | - | 650V | 15A (Tc) | 280 mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | 10V | ±20V | |||
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VIEW |
2,257
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,812
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 92W (Tc) | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | |||
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VIEW |
2,763
In-stock
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Infineon Technologies | MOSFET N-CH 55V 49A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 55V | 49A (Tc) | 17.5 mOhm @ 25A, 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | 10V | ±20V | |||
