Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFZ46ZL
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RFQ
1,048
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Infineon Technologies MOSFET N-CH 55V 51A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 82W (Tc) N-Channel - 55V 51A (Tc) 13.6 mOhm @ 31A, 10V 4V @ 250µA 46nC @ 10V 1460pF @ 25V 10V ±20V
IRFZ46ZLPBF
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RFQ
2,658
In-stock
Infineon Technologies MOSFET N-CH 55V 51A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 82W (Tc) N-Channel - 55V 51A (Tc) 13.6 mOhm @ 31A, 10V 4V @ 250µA 46nC @ 10V 1460pF @ 25V 10V ±20V
IRFZ34L
RFQ
VIEW
RFQ
3,896
In-stock
Vishay Siliconix MOSFET N-CH 60V 30A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.7W (Ta), 88W (Tc) N-Channel - 60V 30A (Tc) 50 mOhm @ 18A, 10V 4V @ 250µA 46nC @ 10V 1200pF @ 25V 10V ±20V
STB6NK60Z-1
RFQ
VIEW
RFQ
2,816
In-stock
STMicroelectronics MOSFET N-CH 600V 6A I2PAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 110W (Tc) N-Channel - 600V 6A (Tc) 1.2 Ohm @ 3A, 10V 4.5V @ 100µA 46nC @ 10V 905pF @ 25V 10V 30V
STI24NM60N
RFQ
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RFQ
1,375
In-stock
STMicroelectronics MOSFET N CH 600V 17A I2PAK MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 125W (Tc) N-Channel - 600V 17A (Tc) 190 mOhm @ 8A, 10V 4V @ 250µA 46nC @ 10V 1400pF @ 50V 10V ±30V