Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF540L
RFQ
VIEW
RFQ
911
In-stock
Vishay Siliconix MOSFET N-CH 100V 28A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 - N-Channel - 100V 28A (Tc) 77 mOhm @ 17A, 10V 4V @ 250µA 72nC @ 10V 1700pF @ 25V 10V ±20V
AUIRFZ46NL
RFQ
VIEW
RFQ
3,818
In-stock
Infineon Technologies MOSFET N-CH 55V 53A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 107W (Tc) N-Channel - 55V 39A (Tc) 16.5 mOhm @ 28A, 10V 4V @ 250µA 72nC @ 10V 1696pF @ 25V 10V ±20V
IRFZ46NL
RFQ
VIEW
RFQ
3,429
In-stock
Infineon Technologies MOSFET N-CH 55V 53A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 107W (Tc) N-Channel - 55V 53A (Tc) 16.5 mOhm @ 28A, 10V 4V @ 250µA 72nC @ 10V 1696pF @ 25V 10V ±20V
IRFZ46NLPBF
RFQ
VIEW
RFQ
1,403
In-stock
Infineon Technologies MOSFET N-CH 55V 53A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 107W (Tc) N-Channel - 55V 53A (Tc) 16.5 mOhm @ 28A, 10V 4V @ 250µA 72nC @ 10V 1696pF @ 25V 10V ±20V
STI32N65M5
RFQ
VIEW
RFQ
758
In-stock
STMicroelectronics MOSFET N-CH 650V 24A I2PAK MDmesh™ V Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 150W (Tc) N-Channel - 650V 24A (Tc) 119 mOhm @ 12A, 10V 5V @ 250µA 72nC @ 10V 3320pF @ 100V 10V ±25V