- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,465
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 75W (Tc) | N-Channel | - | 40V | 72A (Tc) | 9.4 mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | 4810pF @ 25V | 10V | ±20V | ||||
VIEW |
3,271
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||||
VIEW |
3,527
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 130W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||||
VIEW |
2,188
In-stock
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STMicroelectronics | MOSFET N-CH 600V 10A I2PAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 115W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70nC @ 10V | 1370pF @ 25V | 10V | ±30V | ||||
VIEW |
3,672
In-stock
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STMicroelectronics | MOSFET N-CH 650V 19A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 650V | 19A (Tc) | 190 mOhm @ 9.5A, 10V | 4V @ 250µA | 70nC @ 10V | 2500pF @ 50V | 10V | ±25V | ||||
VIEW |
2,901
In-stock
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STMicroelectronics | MOSFET N-CH 600V 19.5A I2PAK | FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150W (Tc) | N-Channel | - | 600V | 19.5A (Tc) | 180 mOhm @ 10A, 10V | 5V @ 250µA | 70nC @ 10V | 2050pF @ 50V | 10V | ±25V | ||||
VIEW |
2,508
In-stock
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Infineon Technologies | MOSFET N-CH TO262-3 | Automotive, AEC-Q101, OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 150W (Tc) | N-Channel | - | 80V | 80A (Tc) | 5.8 mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | 4800pF @ 25V | 10V | ±20V | ||||
VIEW |
1,347
In-stock
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Infineon Technologies | MOSFET N-CH 650V 25A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 208W (Tc) | N-Channel | - | 650V | 25A (Tc) | 125 mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | 2500pF @ 100V | 10V | ±20V |