Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80CN10N G
RFQ
VIEW
RFQ
1,763
In-stock
Infineon Technologies MOSFET N-CH 100V 13A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 31W (Tc) N-Channel 100V 13A (Tc) 80 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 716pF @ 50V 10V ±20V
IRF9610L
RFQ
VIEW
RFQ
2,435
In-stock
Vishay Siliconix MOSFET P-CH 200V 1.8A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - P-Channel 200V 1.8A (Tc) 3 Ohm @ 900mA, 10V 4V @ 250µA 11nC @ 10V 170pF @ 25V 10V ±20V
AOW11S60
RFQ
VIEW
RFQ
2,289
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 178W (Tc) N-Channel 600V 11A (Tc) 399 mOhm @ 3.8A, 10V 4.1V @ 250µA 11nC @ 10V 545pF @ 100V 10V ±30V
IRFZ14L
RFQ
VIEW
RFQ
3,594
In-stock
Vishay Siliconix MOSFET N-CH 60V 10A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.7W (Ta), 43W (Tc) N-Channel 60V 10A (Tc) 200 mOhm @ 6A, 10V 4V @ 250µA 11nC @ 10V 300pF @ 25V 10V ±20V