- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,455
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 11 mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | 10V | ±20V | |||
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VIEW |
735
In-stock
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Infineon Technologies | MOSFET N-CH 40V 80A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 136W (Tc) | N-Channel | - | 40V | 80A (Tc) | 4.1 mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | 5200pF @ 25V | 10V | ±20V | |||
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VIEW |
2,303
In-stock
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Vishay Siliconix | MOSFET N-CH 450V 8.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | - | 450V | 8.8A (Tc) | 630 mOhm @ 5.3A, 10V | 4V @ 250µA | 80nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,203
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 158W (Tc) | N-Channel | - | 55V | 80A (Tc) | 10.7 mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | 10V | ±20V | |||
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VIEW |
3,478
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 105 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
800
In-stock
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Infineon Technologies | MOSFET N-CH 60V 31A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 255W (Tc) | N-Channel | - | 600V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V | |||
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VIEW |
2,742
In-stock
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STMicroelectronics | MOSFET N-CH 600V 21A I2PAK | FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 80nC @ 10V | 2400pF @ 50V | 10V | ±25V | |||
