Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI052NE7N3 G
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3,548
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Infineon Technologies MOSFET N-CH 75V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel - 75V 80A (Tc) 5.2 mOhm @ 80A, 10V 3.8V @ 91µA 68nC @ 10V 4750pF @ 37.5V 10V ±20V
IRF644L
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RFQ
3,398
In-stock
Vishay Siliconix MOSFET N-CH 250V 14A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - N-Channel - 250V 14A (Tc) 280 mOhm @ 8.4A, 10V 4V @ 250µA 68nC @ 10V 1300pF @ 25V 10V ±20V
IPI90R500C3XKSA1
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RFQ
2,720
In-stock
Infineon Technologies MOSFET N-CH 900V 11A TO-262 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 156W (Tc) N-Channel - 900V 11A (Tc) 500 mOhm @ 6.6A, 10V 3.5V @ 740µA 68nC @ 10V 1700pF @ 100V 10V ±20V
IPI65R190CFDXKSA1
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RFQ
2,794
In-stock
Infineon Technologies MOSFET N-CH 650V 17.5A TO262 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 151W (Tc) N-Channel - 650V 17.5A (Tc) 190 mOhm @ 7.3A, 10V 4.5V @ 730µA 68nC @ 10V 1850pF @ 100V 10V ±20V
STB9NK70Z-1
RFQ
VIEW
RFQ
662
In-stock
STMicroelectronics MOSFET N-CH 700V 7.5A I2PAK SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 115W (Tc) N-Channel - 700V 7.5A (Tc) 1.2 Ohm @ 4A, 10V 4.5V @ 100µA 68nC @ 10V 1370pF @ 25V 10V ±30V