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- Supplier Device Package :
- Power Dissipation (Max) :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,744
In-stock
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ON Semiconductor | MOSFET P-CH 400V 3.5A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | P-Channel | - | 400V | 3.5A (Tc) | 3.1 Ohm @ 1.75A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 10V | ±30V | |||
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VIEW |
3,593
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.7A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | P-Channel | - | 500V | 2.7A (Tc) | 4.9 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | |||
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VIEW |
1,847
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | 10V | ±30V | |||
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VIEW |
3,201
In-stock
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Infineon Technologies | MOSFET N-CH 650V 7.3A TO262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | |||
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VIEW |
1,007
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 74W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | 10V | ±30V | |||
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VIEW |
3,377
In-stock
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Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
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VIEW |
1,295
In-stock
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Infineon Technologies | MOSFET N-CH 500V 9A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 500V | 9A (Tc) | 399 mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | 890pF @ 100V | 10V | ±20V | |||
