- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,470
In-stock
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ON Semiconductor | MOSFET N-CH 200V 19A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V | |||
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VIEW |
1,564
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 19A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 19A (Tc) | 200 mOhm @ 11A, 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,260
In-stock
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Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | |||
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VIEW |
2,968
In-stock
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STMicroelectronics | MOSFET N-CH 600V 19A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150W (Tc) | N-Channel | - | 600V | 19A (Tc) | 180 mOhm @ 9.5A, 10V | 4V @ 250µA | 60nC @ 10V | 2050pF @ 50V | 10V | ±25V | |||
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VIEW |
1,310
In-stock
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Infineon Technologies | MOSFET P-CH 55V 19A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 68W (Tc) | P-Channel | - | 55V | 19A (Tc) | 100 mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | 10V | ±20V | |||
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VIEW |
3,672
In-stock
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STMicroelectronics | MOSFET N-CH 650V 19A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 650V | 19A (Tc) | 190 mOhm @ 9.5A, 10V | 4V @ 250µA | 70nC @ 10V | 2500pF @ 50V | 10V | ±25V | |||
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VIEW |
3,650
In-stock
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Infineon Technologies | MOSFET NCH 300V 19A TO262 | Automotive, AEC-Q101, HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 210W (Tc) | N-Channel | - | 300V | 19A (Tc) | 185 mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | 2340pF @ 25V | 10V | ±20V |