- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,812
In-stock
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Infineon Technologies | MOSFET N-CH 500V 21A I2PAK | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 500V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,403
In-stock
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Infineon Technologies | MOSFET N-CH 100V 21A TO-262 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 90W (Tc) | N-Channel | - | 100V | 21A (Tc) | 80 mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | 865pF @ 25V | 10V | ±20V | |||
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VIEW |
3,438
In-stock
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Infineon Technologies | MOSFET N-CH 150V 21A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
1,099
In-stock
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STMicroelectronics | MOSFET N-CH 600V 21A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 4V @ 250µA | 84nC @ 10V | 2400pF @ 50V | 10V | ±25V | |||
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VIEW |
3,201
In-stock
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Infineon Technologies | MOSFET N-CH 560V 21A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 208W (Tc) | N-Channel | - | 560V | 21A (Tc) | 190 mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,020
In-stock
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Infineon Technologies | MOSFET N-CH 150V 21A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,742
In-stock
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STMicroelectronics | MOSFET N-CH 600V 21A I2PAK | FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | N-Channel | - | 600V | 21A (Tc) | 160 mOhm @ 10.5A, 10V | 5V @ 250µA | 80nC @ 10V | 2400pF @ 50V | 10V | ±25V | |||
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VIEW |
2,294
In-stock
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Infineon Technologies | MOSFET N-CH 650V 21A TO-262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 192W (Tc) | N-Channel | - | 650V | 21A (Tc) | 165 mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | 10V | ±20V | |||
