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- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,319
In-stock
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ON Semiconductor | MOSFET P-CH 60V 11.4A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 53W (Tc) | P-Channel | - | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 10V | ±25V | |||
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VIEW |
836
In-stock
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ON Semiconductor | MOSFET N-CH 400V 11.4A I2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.13W (Ta), 147W (Tc) | N-Channel | - | 400V | 11.4A (Tc) | 480 mOhm @ 5.7A, 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,230
In-stock
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Infineon Technologies | MOSFET N-CH 650V 11.4A TO262 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104.2W (Tc) | N-Channel | - | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
