- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,437
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 100W (Tc) | N-Channel | - | 200V | 18A (Tc) | 105 mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | 1200pF @ 50V | 10V | ±20V | |||
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VIEW |
3,271
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 130W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
3,527
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 130W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,294
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,850
In-stock
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STMicroelectronics | MOSFET N-CH 650V 18A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | |||
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VIEW |
1,411
In-stock
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STMicroelectronics | MOSFET N-CH 500V 18A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 140W (Tc) | N-Channel | - | 500V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 65nC @ 10V | 1950pF @ 25V | 10V | ±25V | |||
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VIEW |
3,338
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | |||
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VIEW |
2,865
In-stock
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STMicroelectronics | MOSFET N-CH 600V 18A I2PAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 150W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | 10V | ±25V | |||
