- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,310
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | 10V | ±30V | |||
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VIEW |
644
In-stock
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ON Semiconductor | MOSFET P-CH 100V 8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 65W (Tc) | P-Channel | 100V | 8A (Tc) | 530 mOhm @ 4A, 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | 10V | ±30V | |||
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VIEW |
2,260
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,069
In-stock
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Infineon Technologies | MOSFET N-CH 800V 8A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
2,378
In-stock
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Infineon Technologies | MOSFET N-CH 800V 8A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 104W (Tc) | N-Channel | 800V | 8A (Tc) | 650 mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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|
VIEW |
1,086
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.8W (Ta), 88W (Tc) | N-Channel | 250V | 8A (Tc) | 435 mOhm @ 4.8A, 10V | 4V @ 250µA | 34nC @ 10V | 620pF @ 25V | 10V | ±20V | |||
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VIEW |
2,257
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,266
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | 10V | ±30V | |||
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|
VIEW |
982
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
