- Manufacture :
- Supplier Device Package :
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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,165
In-stock
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NXP USA Inc. | MOSFET N-CH 75V 100A I2PAK | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 333W (Tc) | N-Channel | - | 75V | 100A (Tc) | 4.3 mOhm @ 25A, 10V | 4V @ 1mA | 142nC @ 10V | 11659pF @ 25V | 10V | ±20V | |||
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VIEW |
1,062
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.8 mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,361
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 100V | 100A (Tc) | 6.5 mOhm @ 100A, 10V | 4V @ 180µA | 139nC @ 10V | 9200pF @ 50V | 10V | ±20V | |||
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VIEW |
3,694
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 5.4 mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | 12000pF @ 50V | 10V | ±20V | |||
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VIEW |
3,791
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 100V | 100A (Tc) | 4.2 mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | 10V | ±20V | |||
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VIEW |
2,899
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO262-3-1 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 115W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.7 mOhm @ 100A, 10V | 4V @ 70µA | 90nC @ 10V | 7180pF @ 25V | 10V | ±20V | |||
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VIEW |
1,331
In-stock
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Nexperia USA Inc. | MOSFET N-CH 40V 100A I2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 333W (Tc) | N-Channel | - | 40V | 100A (Tc) | 2.3 mOhm @ 25A, 10V | 4V @ 1mA | 175nC @ 10V | 11323pF @ 25V | 10V | ±20V | |||
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VIEW |
3,552
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 4.4 mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | 14230pF @ 25V | 10V | ±20V | |||
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VIEW |
2,040
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A I2PAK | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.3 mOhm @ 80A, 10V | 4V @ 230µA | 480nC @ 10V | 21620pF @ 25V | 10V | ±20V | |||
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VIEW |
1,603
In-stock
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Infineon Technologies | MOSFET N-CH 30V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 30V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 10V | ±20V | |||
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VIEW |
3,120
In-stock
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Infineon Technologies | MOSFET N-CH 40V 100A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 2.4W (Ta), 170W (Tc) | N-Channel | - | 40V | 100A (Tc) | 9 mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,396
In-stock
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Infineon Technologies | MOSFET N-CH 30V 100A TO-262 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 300W (Tc) | N-Channel | - | 30V | 100A (Tc) | 3 mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | 10V | ±20V | |||
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VIEW |
1,493
In-stock
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Infineon Technologies | MOSFET N-CH 75V 100A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 75V | 100A (Tc) | 7.8 mOhm @ 78A, 10V | 4V @ 250µA | 250nC @ 10V | 5600pF @ 25V | 10V | ±20V | |||
