Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF737LCL
RFQ
VIEW
RFQ
3,682
In-stock
Vishay Siliconix MOSFET N-CH 300V 6.1A TO-262 - Active Tube MOSFET (Metal Oxide) - Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK - N-Channel - 300V 6.1A (Tc) 750 mOhm @ 3.7A, 10V 4V @ 250µA 17nC @ 10V 430pF @ 25V 10V ±30V
FQI5N30TU
RFQ
VIEW
RFQ
1,718
In-stock
ON Semiconductor MOSFET N-CH 300V 5.4A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 70W (Tc) N-Channel - 300V 5.4A (Tc) 900 mOhm @ 2.7A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
FQI3N30TU
RFQ
VIEW
RFQ
862
In-stock
ON Semiconductor MOSFET N-CH 300V 3.2A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 55W (Tc) N-Channel - 300V 3.2A (Tc) 2.2 Ohm @ 1.6A, 10V 5V @ 250µA 7nC @ 10V 230pF @ 25V 10V ±30V
FQI2N30TU
RFQ
VIEW
RFQ
2,589
In-stock
ON Semiconductor MOSFET N-CH 300V 2.1A I2PAK QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 3.13W (Ta), 40W (Tc) N-Channel - 300V 2.1A (Tc) 3.7 Ohm @ 1.05A, 10V 5V @ 250µA 5nC @ 10V 130pF @ 25V 10V ±30V
AUIRFSL6535
RFQ
VIEW
RFQ
3,650
In-stock
Infineon Technologies MOSFET NCH 300V 19A TO262 Automotive, AEC-Q101, HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 210W (Tc) N-Channel - 300V 19A (Tc) 185 mOhm @ 11A, 10V 5V @ 150µA 57nC @ 10V 2340pF @ 25V 10V ±20V