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- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,852
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.7A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 89W (Tc) | N-Channel | - | 900V | 5.7A (Tc) | 1 Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | 10V | ±20V | |||
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VIEW |
3,568
In-stock
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ON Semiconductor | MOSFET N-CH 900V 3.6A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 130W (Tc) | N-Channel | - | 900V | 3.6A (Tc) | 4.25 Ohm @ 1.8A, 10V | 5V @ 250µA | 26nC @ 10V | 910pF @ 25V | 10V | ±30V | |||
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VIEW |
1,915
In-stock
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ON Semiconductor | MOSFET N-CH 900V 2.2A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 85W (Tc) | N-Channel | - | 900V | 2.2A (Tc) | 7.2 Ohm @ 1.1A, 10V | 5V @ 250µA | 15nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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VIEW |
647
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 3.6A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | - | 900V | 3.6A (Tc) | 3.7 Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
3,427
In-stock
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ON Semiconductor | MOSFET N-CH 900V 2.8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 107W (Tc) | N-Channel | - | 900V | 2.8A (Tc) | 5.8 Ohm @ 1.4A, 10V | 5V @ 250µA | 20nC @ 10V | 680pF @ 25V | 10V | ±30V | |||
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VIEW |
2,720
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
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VIEW |
3,660
In-stock
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Infineon Technologies | MOSFET N-CH 900V 5.1A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 83W (Tc) | N-Channel | - | 900V | 5.1A (Tc) | 1.2 Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
981
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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VIEW |
2,777
In-stock
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO262-3 | CoolMOS™ | Obsolete | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
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VIEW |
3,864
In-stock
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Infineon Technologies | MOSFET N-CH 900V 15A TO-262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 208W (Tc) | N-Channel | - | 900V | 15A (Tc) | 340 mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | 2400pF @ 100V | 10V | ±20V | |||
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VIEW |
1,317
In-stock
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Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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VIEW |
2,834
In-stock
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ON Semiconductor | MOSFET N-CH 900V 4.2A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 140W (Tc) | N-Channel | - | 900V | 4.2A (Tc) | 3.3 Ohm @ 2.1A, 10V | 5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,464
In-stock
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Infineon Technologies | MOSFET N-CH 900V 6.9A TO-262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 900V | 6.9A (Tc) | 800 mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
