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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF2903ZLPBF	RFQ VIEW	PDF RFQ	2,972 In-stock	Infineon Technologies	MOSFET N-CH 30V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	231W (Tc)	N-Channel	-	30V	75A (Tc)	2.4 mOhm @ 75A, 10V	4V @ 150µA	240nC @ 10V	6320pF @ 25V	10V	±20V
	AUIRF2903ZL	RFQ VIEW	PDF RFQ	2,795 In-stock	Infineon Technologies	MOSFET N-CH 30V 235A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	231W (Tc)	N-Channel	-	30V	160A (Tc)	2.4 mOhm @ 75A, 10V	4V @ 150µA	240nC @ 10V	6320pF @ 25V	10V	±20V
	FDI040N06	RFQ VIEW	PDF RFQ	3,775 In-stock	ON Semiconductor	MOSFET N-CH 60V 120A I2PAK		PowerTrench®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	231W (Tc)	N-Channel	-	60V	120A (Tc)	4 mOhm @ 75A, 10V	4.5V @ 250µA	133nC @ 10V	8235pF @ 25V	10V	±20V
	FDI030N06	RFQ VIEW	PDF RFQ	2,100 In-stock	ON Semiconductor	MOSFET N-CH 60V 120A I2PAK		PowerTrench®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)	231W (Tc)	N-Channel	-	60V	120A (Tc)	3.2 mOhm @ 75A, 10V	4.5V @ 250µA	151nC @ 10V	9815pF @ 25V	10V	±20V

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