Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI50R140CP
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RFQ
2,430
In-stock
Infineon Technologies MOSFET N-CH 550V 23A TO262-3 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 192W (Tc) N-Channel - 550V 23A (Tc) 140 mOhm @ 14A, 10V 3.5V @ 930µA 64nC @ 10V 2540pF @ 100V 10V ±20V
STB20NM60-1
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RFQ
3,186
In-stock
STMicroelectronics MOSFET N-CH 600V 20A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 192W (Tc) N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 54nC @ 10V 1500pF @ 25V 10V ±30V
IPI60R165CPAKSA1
RFQ
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RFQ
2,294
In-stock
Infineon Technologies MOSFET N-CH 650V 21A TO-262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 192W (Tc) N-Channel - 650V 21A (Tc) 165 mOhm @ 12A, 10V 3.5V @ 790µA 52nC @ 10V 2000pF @ 100V 10V ±20V
STB20NM50-1
RFQ
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RFQ
2,363
In-stock
STMicroelectronics MOSFET N-CH 550V 20A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 192W (Tc) N-Channel - 550V 20A (Tc) 250 mOhm @ 10A, 10V 5V @ 250µA 56nC @ 10V 1480pF @ 25V 10V ±30V