Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN3R3-80ES,127
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RFQ
3,077
In-stock
Nexperia USA Inc. MOSFET N-CH 80V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 80V 120A (Tc) 3.3 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9961pF @ 40V 10V ±20V
PSMN3R5-80ES,127
RFQ
VIEW
RFQ
1,863
In-stock
Nexperia USA Inc. MOSFET N-CH 80V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 80V 120A (Tc) 3.5 mOhm @ 25A, 10V 4V @ 1mA 139nC @ 10V 9800pF @ 30V 10V ±20V
PSMN5R0-100ES,127
RFQ
VIEW
RFQ
2,986
In-stock
Nexperia USA Inc. MOSFET N-CH 100V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 100V 120A (Tc) 5 mOhm @ 25A, 10V 4V @ 1mA 170nC @ 10V 9900pF @ 50V 10V ±20V
PSMN2R0-60ES,127
RFQ
VIEW
RFQ
2,345
In-stock
Nexperia USA Inc. MOSFET N-CH 60V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 60V 120A (Tc) 2.2 mOhm @ 25A, 10V 4V @ 1mA 137nC @ 10V 9997pF @ 30V 10V ±20V
PSMN1R5-40ES,127
RFQ
VIEW
RFQ
3,497
In-stock
Nexperia USA Inc. MOSFET N-CH 40V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 338W (Tc) N-Channel 40V 120A (Tc) 1.6 mOhm @ 25A, 10V 4V @ 1mA 136nC @ 10V 9710pF @ 20V 10V ±20V