Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI100N04S4H2AKSA1
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RFQ
2,899
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Infineon Technologies MOSFET N-CH 40V 100A TO262-3-1 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 115W (Tc) N-Channel - 40V 100A (Tc) 2.7 mOhm @ 100A, 10V 4V @ 70µA 90nC @ 10V 7180pF @ 25V 10V ±20V
IPI80N04S3H4AKSA1
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RFQ
2,990
In-stock
Infineon Technologies MOSFET N-CH 40V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 115W (Tc) N-Channel - 40V 80A (Tc) 4.8 mOhm @ 80A, 10V 4V @ 65µA 60nC @ 10V 3900pF @ 25V 10V ±20V
STB10NK60Z-1
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RFQ
2,188
In-stock
STMicroelectronics MOSFET N-CH 600V 10A I2PAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 115W (Tc) N-Channel - 600V 10A (Tc) 750 mOhm @ 4.5A, 10V 4.5V @ 250µA 70nC @ 10V 1370pF @ 25V 10V ±30V
STB9NK70Z-1
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RFQ
662
In-stock
STMicroelectronics MOSFET N-CH 700V 7.5A I2PAK SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 115W (Tc) N-Channel - 700V 7.5A (Tc) 1.2 Ohm @ 4A, 10V 4.5V @ 100µA 68nC @ 10V 1370pF @ 25V 10V ±30V