Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRF3205ZL
RFQ
VIEW
RFQ
3,321
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 55V 75A (Tc) 6.5 mOhm @ 66A, 10V 4V @ 250µA 110nC @ 10V 3450pF @ 25V 10V ±20V
IRF2807ZL
RFQ
VIEW
RFQ
1,814
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
IRFSL9N60ATRR
RFQ
VIEW
RFQ
1,958
In-stock
Vishay Siliconix MOSFET N-CH 600V 9.2A TO-262 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel - 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRFSL9N60ATRL
RFQ
VIEW
RFQ
1,225
In-stock
Vishay Siliconix MOSFET N-CH 600V 9.2A TO-262 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel - 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRF3205ZLPBF
RFQ
VIEW
RFQ
3,733
In-stock
Infineon Technologies MOSFET N-CH 55V 75A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 55V 75A (Tc) 6.5 mOhm @ 66A, 10V 4V @ 250µA 110nC @ 10V 3450pF @ 25V 10V ±20V
IRF2807ZLPBF
RFQ
VIEW
RFQ
706
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
STI28N60M2
RFQ
VIEW
RFQ
3,747
In-stock
STMicroelectronics MOSFET N-CH 600V 22A I2PAK MDmesh™ M2 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 170W (Tc) N-Channel - 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V
IRFSL9N60A
RFQ
VIEW
RFQ
1,826
In-stock
Vishay Siliconix MOSFET N-CH 600V 9.2A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 170W (Tc) N-Channel - 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
PSMN013-100ES,127
RFQ
VIEW
RFQ
3,568
In-stock
Nexperia USA Inc. MOSFET N-CH 100V I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel - 100V 68A (Tc) 13.9 mOhm @ 15A, 10V 4V @ 1mA 59nC @ 10V 3195pF @ 50V 10V ±20V
IRFSL9N60APBF
RFQ
VIEW
RFQ
2,082
In-stock
Vishay Siliconix MOSFET N-CH 600V 9.2A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 170W (Tc) N-Channel - 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRF4905LPBF
RFQ
VIEW
RFQ
2,839
In-stock
Infineon Technologies MOSFET P-CH 55V 42A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) P-Channel - 55V 42A (Tc) 20 mOhm @ 42A, 10V 4V @ 250µA 180nC @ 10V 3500pF @ 25V 10V ±20V