Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80N04S304AKSA1
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735
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Infineon Technologies MOSFET N-CH 40V 80A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 136W (Tc) N-Channel - 40V 80A (Tc) 4.1 mOhm @ 80A, 10V 4V @ 90µA 80nC @ 10V 5200pF @ 25V 10V ±20V
IPI120P04P404AKSA1
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2,789
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.8 mOhm @ 100A, 10V 4V @ 340µA 205nC @ 10V 14790pF @ 25V 10V ±20V
IPI320N20N3GAKSA1
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RFQ
2,427
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Infineon Technologies MOSFET N-CH 200V 34A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 136W (Tc) N-Channel - 200V 34A (Tc) 32 mOhm @ 34A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V
IPI600N25N3GAKSA1
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RFQ
1,345
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Infineon Technologies MOSFET N-CH 250V 25A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 136W (Tc) N-Channel - 250V 25A (Tc) 60 mOhm @ 25A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V