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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
678
In-stock
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Infineon Technologies | MOSFET N-CH 120V 56A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 107W (Tc) | N-Channel | 120V | 56A (Ta) | 14.7 mOhm @ 56A, 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | 10V | ±20V | ||||
VIEW |
1,958
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||||
VIEW |
1,225
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||||
VIEW |
2,082
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V |