Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STB21NM60N-1
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RFQ
2,191
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STMicroelectronics MOSFET N-CH 600V 17A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 140W (Tc) N-Channel - 600V 17A (Tc) 220 mOhm @ 8.5A, 10V 4V @ 250µA 66nC @ 10V 1900pF @ 50V 10V ±25V
STB20NM60-1
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RFQ
3,186
In-stock
STMicroelectronics MOSFET N-CH 600V 20A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 192W (Tc) N-Channel - 600V 20A (Tc) 290 mOhm @ 10A, 10V 5V @ 250µA 54nC @ 10V 1500pF @ 25V 10V ±30V
STB11NM60-1
RFQ
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RFQ
2,166
In-stock
STMicroelectronics MOSFET N-CH 650V 11A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel - 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±30V
STB20NM50-1
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RFQ
2,363
In-stock
STMicroelectronics MOSFET N-CH 550V 20A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 192W (Tc) N-Channel - 550V 20A (Tc) 250 mOhm @ 10A, 10V 5V @ 250µA 56nC @ 10V 1480pF @ 25V 10V ±30V
STI11NM80
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RFQ
3,557
In-stock
STMicroelectronics MOSFET N-CH 800V 11A I2PAK-3 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 150W (Tc) N-Channel - 800V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 43.6nC @ 10V 1630pF @ 25V 10V ±30V