- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,619
In-stock
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NXP USA Inc. | MOSFET N-CH 30V 120A I2PAK | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 349W (Tc) | N-Channel | - | 30V | 120A (Tc) | 1.6 mOhm @ 25A, 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | 10V | ±20V | ||||
VIEW |
2,322
In-stock
|
NXP USA Inc. | MOSFET N-CH 30V 75A I2PAK | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 300W (Tc) | N-Channel | - | 30V | 75A (Tc) | 2.7 mOhm @ 25A, 10V | 4V @ 1mA | 91nC @ 10V | 6212pF @ 25V | 10V | ±20V |