- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,109
In-stock
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Microsemi Corporation | MOSFET N-CH 800V 18A D3PAK | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 500W (Tc) | N-Channel | - | 800V | 18A (Tc) | 580 mOhm @ 9A, 10V | 5V @ 1mA | 122nC @ 10V | 3757pF @ 25V | 10V | ±30V | |||
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VIEW |
1,065
In-stock
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IXYS | MOSFET N-CH 900V 18A TO268 | HiPerFET™, PolarP2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 540W (Tc) | N-Channel | - | 900V | 18A (Tc) | 600 mOhm @ 500mA, 10V | 6.5V @ 1mA | 97nC @ 10V | 5230pF @ 25V | 10V | ±30V | |||
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VIEW |
3,968
In-stock
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IXYS | MOSFET N-CH 1000V 18A TO-268 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | 830W (Tc) | N-Channel | - | 1000V | 18A (Tc) | 660 mOhm @ 9A, 10V | 6.5V @ 4mA | 90nC @ 10V | 4890pF @ 25V | 10V | ±30V | |||
