- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,500
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 3.3A TO251 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 38W (Tc) | N-Channel | 600V | 3.3A (Tc) | 1.4 Ohm @ 2A, 10V | 4V @ 250µA | 7.7nC @ 10V | 370pF @ 100V | 10V | ±30V | |||
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VIEW |
3,346
In-stock
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Vishay Siliconix | MOSFET N-CH 500V 3.3A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 83W (Tc) | N-Channel | 500V | 3.3A (Tc) | 3 Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | 10V | ±30V | |||
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VIEW |
1,076
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 700V 3.3A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 38W (Tc) | N-Channel | 700V | 3.3A (Tc) | 1.4 Ohm @ 1.2A, 10V | 4V @ 250µA | 7.7nC @ 10V | 370pF @ 100V | 10V | ±30V | |||
