- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,693
In-stock
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ON Semiconductor | MOSFET P-CH | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 1W (Ta), 26W (Tc) | N-Channel | 250V | 3A (Ta) | 2.4 Ohm @ 1.5A, 10V | 4.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | 10V | ±30V | |||
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VIEW |
2,521
In-stock
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ON Semiconductor | MOSFET N-CH 250V 3A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK/TP | 1W (Ta), 26W (Tc) | N-Channel | 250V | 3A (Ta) | 2.4 Ohm @ 1.5A, 10V | 4.5V @ 1mA | 4.2nC @ 10V | 210pF @ 20V | 10V | ±30V | |||
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VIEW |
2,260
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 250V 8A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 52W (Tc) | N-Channel | 250V | 8A (Tc) | 600 mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | 423pF @ 25V | 10V | ±30V |