- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,227
In-stock
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STMicroelectronics | MOSFET N-CH 800V 12A I2PAK-FP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 35W (Tc) | N-Channel | - | 800V | 12A (Tc) | 450 mOhm @ 6A, 10V | 5V @ 100µA | 29nC @ 10V | 870pF @ 100V | 10V | ±30V | ||||
VIEW |
2,699
In-stock
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STMicroelectronics | MOSFET N CH 650V 11A I2PAKFP | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 650V | 11A (Tc) | 455 mOhm @ 5.5A, 10V | 4V @ 250µA | 29nC @ 10V | 800pF @ 50V | 10V | ±25V | ||||
VIEW |
2,021
In-stock
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STMicroelectronics | MOSFET N CH 600V 18A TO281 | MDmesh™ II Plus | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | 10V | ±25V |