Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9640L
RFQ
VIEW
RFQ
2,439
In-stock
Vishay Siliconix MOSFET P-CH 200V 11A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3W (Ta), 125W (Tc) P-Channel - 200V 11A (Tc) 500 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V
IRF9640LPBF
RFQ
VIEW
RFQ
1,865
In-stock
Vishay Siliconix MOSFET P-CH 200V 11A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 3W (Ta), 125W (Tc) P-Channel - 200V 11A (Tc) 500 mOhm @ 6.6A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V
STB11NM60-1
RFQ
VIEW
RFQ
2,166
In-stock
STMicroelectronics MOSFET N-CH 650V 11A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel - 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±30V
STI12NM50N
RFQ
VIEW
RFQ
2,766
In-stock
STMicroelectronics MOSFET N-CH 500V 11A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 100W (Tc) N-Channel - 500V 11A (Tc) 380 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 940pF @ 50V 10V ±25V
STI13NM60N
RFQ
VIEW
RFQ
1,166
In-stock
STMicroelectronics MOSFET N-CH 600V 11A I2PAK MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 90W (Tc) N-Channel - 600V 11A (Tc) 360 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V 790pF @ 50V 10V ±25V