Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BFL4001-1EX
RFQ
VIEW
RFQ
2,487
In-stock
ON Semiconductor MOSFET N-CH 900V 6.5A TO220 - Obsolete Tube MOSFET (Metal Oxide) 150°C (TA) Through Hole TO-220-3 Full Pack TO-220-3 Fullpack/TO-220F-3SG 2W (Ta), 37W (Tc) N-Channel - 900V 6.5A (Ta) 2.7 Ohm @ 3.25A, 10V - 44nC @ 10V 850pF @ 30V 10V ±30V
2SK4125-1EX
RFQ
VIEW
RFQ
3,088
In-stock
ON Semiconductor MOSFET N-CH 600V 17A TO3P - Obsolete Tube MOSFET (Metal Oxide) 150°C (TA) Through Hole TO-3P-3, SC-65-3 TO-3P-3L 2.5W (Ta), 170W (Tc) N-Channel - 600V 17A (Ta) 610 mOhm @ 7A, 10V - 46nC @ 10V 1200pF @ 30V 10V ±30V
TK31V60W5,LVQ
RFQ
VIEW
RFQ
3,069
In-stock
Toshiba Semiconductor and Storage MOSFET N -CH 600V 30.8A DFN DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TA) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel - 600V 30.8A (Ta) 109 mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105nC @ 10V 3000pF @ 300V 10V ±30V
TK31V60W5,LVQ
RFQ
VIEW
RFQ
3,327
In-stock
Toshiba Semiconductor and Storage MOSFET N -CH 600V 30.8A DFN DTMOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel - 600V 30.8A (Ta) 109 mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105nC @ 10V 3000pF @ 300V 10V ±30V
TK31V60W5,LVQ
RFQ
VIEW
RFQ
2,905
In-stock
Toshiba Semiconductor and Storage MOSFET N -CH 600V 30.8A DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TA) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel - 600V 30.8A (Ta) 109 mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105nC @ 10V 3000pF @ 300V 10V ±30V