Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK9E1R8-40E,127
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NXP USA Inc. MOSFET N-CH 40V 120A I2PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 349W (Tc) N-Channel 40V 120A (Tc) 1.7 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 16400pF @ 25V 5V, 10V ±10V