- Manufacture :
- Supplier Device Package :
- Gate Charge (Qg) (Max) @ Vgs :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Part Status | Packaging | Technology | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | |
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VIEW |
1,596
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO-220AB | Active | Tube | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | TO-220-3 | 128W | N-Channel | 75V | 60A | 9 mOhm @ 30A, 10V | 75nC @ 10V | |||
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VIEW |
1,954
In-stock
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STMicroelectronics | MOSFET | Active | - | MOSFET (Metal Oxide) | Through Hole | TO-247-3 | TO-247 | - | N-Channel | 300V | 60A | - | 180nC @ 100V | |||
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VIEW |
3,319
In-stock
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STMicroelectronics | MOSFET | Active | - | MOSFET (Metal Oxide) | Through Hole | TO-247-3 | TO-247 | - | N-Channel | 300V | 60A | - | 180nC @ 100V |