Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,530
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount D-3 Module D3 175W (Tc) N-Channel - 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - - -
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1,995
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 175W (Tc) N-Channel - 1200V 25A (Tc) 175 mOhm @ 10A, 20V 2.5V @ 1mA 72nC @ 20V - 20V +25V, -10V
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1,074
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IXYS MOSFET N-CH 800V 25A ISO264 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISO264™ ISO264™ 250W (Tc) N-Channel - 800V 25A (Tc) 150 mOhm @ 9A, 10V 4V @ 2mA 166nC @ 10V - 10V ±20V
IXFR25N90
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2,847
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IXYS MOSFET N-CH 900V 25A ISOPLUS247 - Active Tube MOSFET (Metal Oxide) - Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel - 900V 25A (Tc) - - - - - -
IXKR25N80C
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1,249
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IXYS MOSFET N-CH 800V 25A ISOPLUS247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 355nC @ 10V - 10V ±20V