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- Series :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,474
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-220 | OptiMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 190W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8.5 mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | 3480pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
839
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A D2PAK | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 190W (Tc) | N-Channel | - | 55V | 80A (Tc) | 8.5 mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | 3480pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,789
In-stock
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STMicroelectronics | MOSFET N-CH 800V 12A TO-247 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 230W (Tc) | N-Channel | - | 800V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4.5V @ 100µA | 155nC @ 10V | 3480pF @ 25V | 10V | ±30V | |||
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VIEW |
1,182
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V | |||
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VIEW |
2,918
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V | |||
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VIEW |
2,679
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V | |||
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VIEW |
2,476
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V | |||
|
VIEW |
2,873
In-stock
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Infineon Technologies | MOSFET N-CH 30V 15A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 15A (Ta) | 7.5 mOhm @ 15A, 10V | 2V @ 250µA | 56nC @ 5V | 3480pF @ 25V | 2.8V, 10V | ±12V |