- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,986
In-stock
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Renesas Electronics America | MOSFET N-CH 600V 30A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 34.7W (Tc) | N-Channel | Super Junction | 600V | 30A (Tc) | 125 mOhm @ 15A, 10V | - | 39nC @ 10V | 2300pF @ 25V | 10V | +30V, -20V | |||
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VIEW |
736
In-stock
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Renesas Electronics America | MOSFET N-CH 600V 30A TO-3PSG | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PSG | TO-3PSG | 227.2W (Tc) | N-Channel | Super Junction | 600V | 30A (Tc) | 125 mOhm @ 15A, 10V | - | 39nC @ 10V | 2300pF @ 25V | 10V | +30V, -20V | |||
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VIEW |
2,854
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 13A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 13A (Ta) | 430 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | 10V | ±30V |