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- Supplier Device Package :
- Power Dissipation (Max) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,647
In-stock
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IXYS | MOSFET N-CH 1200V 3A TO-263 | HiPerFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 200W (Tc) | N-Channel | - | 1200V | 3A (Tc) | 4.5 Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V | ||||
VIEW |
768
In-stock
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Rohm Semiconductor | NCH 600V 15A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 184W (Tc) | N-Channel | - | 600V | 15A (Tc) | 290 mOhm @ 6.5A, 10V | 5V @ 1mA | 37.5nC @ 10V | 1050pF @ 25V | 10V | ±20V | ||||
VIEW |
3,045
In-stock
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IXYS | MOSFET N-CH 1000V 4A TO-263 | HiPerFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 150W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | 10V | ±20V |