Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPP04N50C3HKSA1
RFQ
VIEW
RFQ
2,019
In-stock
Infineon Technologies MOSFET N-CH 560V 4.5A TO-220AB CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole PG-TO220-3-1 50W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V
DMN95H8D5HCT
RFQ
VIEW
RFQ
1,923
In-stock
Diodes Incorporated MOSFET N-CH 950V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 125W (Tc) N-Channel - 950V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
Default Photo
RFQ
VIEW
RFQ
2,124
In-stock
Diodes Incorporated MOSFET N-CH 900V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 125W (Tc) N-Channel - 900V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
FQP8P10
RFQ
VIEW
RFQ
3,526
In-stock
ON Semiconductor MOSFET P-CH 100V 8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 65W (Tc) P-Channel - 100V 8A (Tc) 530 mOhm @ 4A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V